Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

Journal Article · Mon Mar 09 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4914889· OSTI ID:22395708

Wu, Yichao; Yu, Xuegong; He, Hang; Chen, Peng; Yang, Deren ^[1]

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1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

• OSTI ID: 22395708
• Journal Information: Applied Physics Letters, Vol. 106, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
CARBON
DIFFUSION
DIMERS
DOPED MATERIALS
OXYGEN
OXYGEN COMPLEXES
SILICON
STRESSES
TENSILE PROPERTIES