Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress
- Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
- Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)
- Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
The effects of vacuum-ultraviolet (VUV) irradiation on copper penetration into non-porous low-k dielectrics under bias-temperature stress (BTS) were investigated. By employing x-ray photoelectron spectroscopy depth-profile measurements on both as-deposited and VUV-irradiated SiCOH/Cu stacks, it was found that under the same BTS conditions, the diffusion depth of Cu into the VUV-irradiated SiCOH is higher than that of as-deposited SiCOH. On the other hand, under the same temperature-annealing stress (TS) without electric bias, the Cu distribution profiles in the VUV-irradiated SiCOH were same with that for the as-deposited SiCOH. The experiments suggest that in as-deposited SiCOH, the diffused Cu exists primarily in the atomic state, while in VUV-irradiated SiCOH, the diffused Cu is oxidized by the hydroxyl ions (OH{sup −}) generated from VUV irradiation and exists in the ionic state. The mechanisms for metal diffusion and ion injection in VUV irradiated low-k dielectrics are discussed.
- OSTI ID:
- 22395660
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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