The influence of carbon doping on the performance of Gd{sub 2}O{sub 3} as high-k gate dielectric
- Department of Materials Science and Engineering, Technion–Israel Institute of Technology, Haifa 32000 (Israel)
- Institute of Electronic Materials and Devices, Leibniz University of Hannover, Schneiderberg 32, 30167 Hannover (Germany)
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai (India)
One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd{sub 2}O{sub 3} layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures.
- OSTI ID:
- 22395617
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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