Inherent point defects at the thermal higher-Miller index (211)Si/SiO{sub 2} interface
Electron spin resonance (ESR) studies were carried out on the higher-Miller index (211)Si/SiO{sub 2} interface thermally grown in the temperature range T{sub ox} = 400–1066 °C to assess interface quality in terms of inherently incorporated point defects. This reveals the presence predominantly of two species of a P{sub b}-type interface defect (interfacial Si dangling bond), which, based on pertinent ESR parameters, is typified as P{sub b0}{sup (211)} variant, close to the P{sub b0} center observed in standard (100)Si/SiO{sub 2}—known as utmost detrimental interface trap. T{sub ox} ≳ 750 °C is required to minimize the P{sub b0}{sup (211)} defect density (∼4.2 × 10{sup 12 }cm{sup −2}; optimized interface). The data clearly reflect the non-elemental nature of the (211)Si face as an average of (100) and (111) surfaces. It is found that in oxidizing (211)Si at T{sub ox} ≳ 750 °C, the optimum Si/SiO{sub 2} interface quality is retained for the two constituent low-index (100) and (111) faces separately, indicating firm anticipating power for higher-index Si/SiO{sub 2} interfaces in general. It implies that, as a whole, the quality of a thermal higher-index Si/SiO{sub 2} interface can never surmount that of the low-index (100)Si/SiO{sub 2} structure.
- OSTI ID:
- 22395609
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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