Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires
Abstract
Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (μ-PL) and μ-PL excitation (μ-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.
- Authors:
-
- Graduate School of Science and Engineering, Ehime University, 790-8577 Matsuyama (Japan)
- Publication Date:
- OSTI Identifier:
- 22395589
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER LIFETIME; CHARGE CARRIERS; EMISSION SPECTROSCOPY; EXCITATION; EXCITONS; FLUCTUATIONS; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOTOLUMINESCENCE; QUANTUM DOTS; RECOMBINATION; SILICON; SUBSTRATES; SURFACES; THREE-DIMENSIONAL LATTICES; TIME RESOLUTION
Citation Formats
Chen, S. L., Filippov, S., Chen, W. M., Buyanova, I. A., E-mail: iribu@ifm.liu.se, and Ishikawa, Fumitaro. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires. United States: N. p., 2014.
Web. doi:10.1063/1.4905090.
Chen, S. L., Filippov, S., Chen, W. M., Buyanova, I. A., E-mail: iribu@ifm.liu.se, & Ishikawa, Fumitaro. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires. United States. https://doi.org/10.1063/1.4905090
Chen, S. L., Filippov, S., Chen, W. M., Buyanova, I. A., E-mail: iribu@ifm.liu.se, and Ishikawa, Fumitaro. 2014.
"Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires". United States. https://doi.org/10.1063/1.4905090.
@article{osti_22395589,
title = {Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires},
author = {Chen, S. L. and Filippov, S. and Chen, W. M. and Buyanova, I. A., E-mail: iribu@ifm.liu.se and Ishikawa, Fumitaro},
abstractNote = {Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (μ-PL) and μ-PL excitation (μ-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.},
doi = {10.1063/1.4905090},
url = {https://www.osti.gov/biblio/22395589},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 105,
place = {United States},
year = {Mon Dec 22 00:00:00 EST 2014},
month = {Mon Dec 22 00:00:00 EST 2014}
}