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Title: Reducing spin-torque switching current by incorporating an ultra-thin Ta layer with CoFeB free layer in magnetic tunnel junctions

We studied the spin torque switching in dual MgO layer based magnetic tunnel junctions (MTJs) by incorporating an ultra-thin (0.5 nm) Ta layer at the CoFeB free layer/top MgO layer interface. The Ta incorporated MTJ showed a significant reduction (∼30%) in critical switching current density (J{sub C0} ) as compared to that of the control MTJ whilst maintaining the same tunneling magnetoresistance as well as thermal stability. The reduction of J{sub C0} can be attributed to the perpendicular magnetic anisotropy arising from the incorporation of an ultrathin Ta layer with the MgO|CoFeB structure. This scheme of reducing J{sub C0} without degrading other properties may contribute to the development of spin-transfer-torque magnetic random access memory for low power applications.
Authors:
; ; ; ; ;  [1]
  1. Data Storage Institute, A*STAR (Agency for Science Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
Publication Date:
OSTI Identifier:
22395540
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; COBALT COMPOUNDS; COMPARATIVE EVALUATIONS; CRITICAL CURRENT; CURRENT DENSITY; INTERFACES; IRON BORIDES; LAYERS; MAGNESIUM OXIDES; MAGNETORESISTANCE; RANDOMNESS; SPIN; TANTALUM; THIN FILMS; TORQUE; TUNNEL EFFECT