Ion beam modification of topological insulator bismuth selenide
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States)
- Sandia National Laboratories, P.O. Box 969, Livermore, California 94551 (United States)
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States)
We demonstrate chemical doping of a topological insulator Bi{sub 2}Se{sub 3} using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi{sub 2}Se{sub 3} thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi{sub 2}Se{sub 3}, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.
- OSTI ID:
- 22395532
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Modification of electrical properties of topological insulators
Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se