Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

Journal Article · Mon Dec 15 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904418· OSTI ID:22395530

Guo, Lei; Yang, Xuelin; Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning ^[1]; Feng, Zhihong; Lv, Yuanjie ^[2]; Wang, Xinqiang; Ge, Weikun ^[3]

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1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
2. National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
3. Department of Physics, Tsinghua University, Beijing 100084 (China)

We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

• OSTI ID: 22395530
• Journal Information: Applied Physics Letters, Vol. 105, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ELECTRIC FIELDS
ELECTRONS
GALLIUM NITRIDES
HETEROJUNCTIONS
HOLES
ILLUMINANCE
RELAXATION
VARIATIONS
VELOCITY
VISIBLE RADIATION