An ultrafast silicon nanoplasmonic ballistic triode

Journal Article · Mon Dec 15 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904804· OSTI ID:22395519

Greig, S. R., E-mail: [e-mail]; Elezzabi, A. Y., E-mail: [e-mail] ^[1]

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1. Ultrafast Optics and Nanophotonics Laboratory, Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)

A nanoscale three terminal silicon based nanoplasmonic triode is proposed as a nanometer transistor. The device is suitable for monolithic integration with complementary-metal-oxide-semiconductor technology. Due to the highly spatially inhomogeneous, highly confined nanoplasmonic mode, electrons generated through two-photon absorption in the silicon are ponderomotively accelerated towards the copper anode producing an output current. Application of a negative grid voltage allows for control of the output current. The nanoplasmonic triode is able to achieve output current as high as 628 mA/μm on an ultrafast timescale of 150 fs in a compact footprint of 0.07 μm{sup 2}. Reduction of the plasmonic field strength allows for a CMOS compatible current of 11.7 mA/μm. The results demonstrate the potential for the compact optical control of current useful for applications in high-speed, high current switching, and amplification.

• OSTI ID: 22395519
• Journal Information: Applied Physics Letters, Vol. 105, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
AMPLIFICATION
ANODES
CONTROL
COPPER
CURIUM OXIDES
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONS
NANOSTRUCTURES
PHOTONS
PLASMONS
PONDEROMOTIVE FORCE
POTENTIALS
SEMICONDUCTOR MATERIALS
SILICON
TRANSISTORS