Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903866· OSTI ID:22395497

Boutchich, M.; Arezki, H.; Alamarguy, D.; Güneş, F.; Alvarez, J.; Kleider, J. P. ^[1]; Ho, K. -I.; Lai, C. S. ^[2]; Sediri, H.; Ouerghi, A. ^[3]

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1. LGEP, CNRS UMR8507, SUPELEC, Univ Paris-Sud, Sorbonne Universités - UPMC, Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France)
2. Department of Electronic Engineering, Chang Gung University, No. 259, Wen-Hua 1st Rd, Kweishan, Taoyuan 333, Taiwan (China)
3. Laboratoire de Photonique et de Nanostructures (CNRS - LPN), Route de Nozay, 91460 Marcoussis (France)

Large-area graphene film doped with nitrogen is of great interest for a wide spectrum of nanoelectronics applications, such as field effect devices, super capacitors, and fuel cells among many others. Here, we report on the structural and electronic properties of nitrogen doped trilayer graphene on 4H-SiC (0001) grown under atmospheric pressure. The trilayer nature of the growth is evidenced by scanning transmission electron microscopy. X-ray photoelectron spectroscopy shows the incorporation of 1.2% of nitrogen distributed in pyrrolic-N, and pyridinic-N configurations as well as a graphitic-N contribution. This incorporation causes an increase in the D band on the Raman signature indicating that the nitrogen is creating defects. Ultraviolet photoelectron spectroscopy shows a decrease of the work function of 0.3 eV due to the N-type doping of the nitrogen atoms in the carbon lattice and the edge defects. A top gate field effect transistor device has been fabricated and exhibits carrier mobilities up to 1300 cm{sup 2}/V s for holes and 850 cm{sup 2}/V s for electrons at room temperature.

• OSTI ID: 22395497
• Journal Information: Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATMOSPHERIC PRESSURE
CARRIER MOBILITY
DOPED MATERIALS
ELECTRONS
EPITAXY
EV RANGE
FIELD EFFECT TRANSISTORS
FILMS
GRAPHENE
GRAPHITE
HOLES
NANOELECTRONICS
NITROGEN
SILICON CARBIDES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
ULTRAVIOLET RADIATION
WORK FUNCTIONS
X-RAY PHOTOELECTRON SPECTROSCOPY