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Title: Field emission properties of ZnO nanosheet arrays

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4903271· OSTI ID:22395490
; ;  [1]; ;  [2]
  1. Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, Savitribai Phule Pune University, Ganeshkhind, Pune - 411007 (India)
  2. SRM Research Institute, SRM University, Kattankulathur, Chennai 603 203, Tamil Nadu (India)

Electron emission properties of electrodeposited ZnO nanosheet arrays grown on Indium tin oxide coated glass substrates have been studied. Influence of oxygen vacancies on electronic structures and field emission properties of ZnO nanosheets are investigated using density functional theory. The oxygen vacancies produce unshared d electrons which form an impurity energy state; this causes shifting of Fermi level towards the vacuum, and so the barrier energy for electron extraction reduces. The ZnO nanosheet arrays exhibit a low turn-on field of 2.4 V/μm at 0.1 μA/cm{sup 2} and current density of 50.1 μA/cm{sup 2} at an applied field of 6.4 V/μm with field enhancement factor, β = 5812 and good field emission current stability. The nanosheet arrays grown by a facile electrodeposition process have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications.

OSTI ID:
22395490
Journal Information:
Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English