Molybdenum oxide MoO{sub x}: A versatile hole contact for silicon solar cells
- Research School of Engineering, The Australian National University, Canberra ACT 0200 (Australia)
- Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf (Switzerland)
This letter examines the application of transparent MoO{sub x} (x < 3) films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells. The carrier-selectivity of MoO{sub x} based contacts on both n- and p-type surfaces is evaluated via simultaneous consideration of the contact recombination parameter J{sub 0c} and the contact resistivity ρ{sub c}. Contacts made to p-type wafers and p{sup +} diffused regions achieve optimum ρ{sub c} values of 1 and 0.2 mΩ·cm{sup 2}, respectively, and both result in a J{sub 0c} of ∼200 fA/cm{sup 2}. These values suggest that significant gains can be made over conventional hole contacts to p-type material. Similar MoO{sub x} contacts made to n-type silicon result in higher J{sub 0c} and ρ{sub c} with optimum values of ∼300 fA/cm{sup 2} and 30 mΩ·cm{sup 2} but still offer significant advantages over conventional approaches in terms of contact passivation, optical properties, and device fabrication.
- OSTI ID:
- 22395473
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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