Reduction of skin effect losses in double-level-T-gate structure
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich (Germany)
- Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava (Slovakia)
- Department of Nuclear Physic and Technique, Slovak University of Technology, SK-81219 Bratislava (Slovakia)
- Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava (Slovakia)
- Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6 (Czech Republic)
- Faculté des Sciences, de la Technologie et de la Communication, Université du Luxembourg, L-1359 Luxembourg (Luxembourg)
We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L{sub g} = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f{sub max} value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.
- OSTI ID:
- 22395468
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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