Effects of H{sub 2} plasma treatment on the electrical properties of titanium-doped indium oxide films prepared by polymer-assisted deposition
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Department of Printed Electronics Engineering, Sunchon National University, Joongang-ro, Sunchon, Chonnam 540-742 (Korea, Republic of)
- Division of Advanced Materials Engineering, Kongju National University, Chenan-si, Chungnam 331-717 (Korea, Republic of)
The effects of hydrogen (H{sub 2}) plasma on the optical and electrical properties of titanium-doped InO (TIO) grown on glass substrates using polymer-assisted deposition are reported. Samples were exposed to H{sub 2} plasma formed by inductively coupled plasma (ICP). After plasma treatment at a power of 100 W, the sheet resistance of the TIO films decreased from 11 000 to 285 Ω/sq. Additionally, the Hall mobility and sheet carrier concentration of the films increased as the ICP source power was increased to 100 W, without affecting the optical transmittance of the films, due to the removal of the polymer residues and the formation of oxygen vacancies.
- OSTI ID:
- 22392196
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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