Properties of Cu(In,Ga,Al)Se{sub 2} thin films fabricated by magnetron sputtering
- Applied Research Center, Old Dominion University, Newport News, Virginia 23606 and Solid State Physics Laboratory, Physics Division, National Research Center, Dokki, Giza 12622 (Egypt)
- Applied Research Center, Old Dominion University, Newport News, Virginia 23606 (United States)
- Solid State Physics Laboratory, Physics Division, National Research Center, Dokki, Giza 12622 (Egypt)
- Department of Physics, College of Science, Mansoura University, Mansoura, Dakhlia 35516 (Egypt)
Cu(In,Ga,Al)Se{sub 2} (CIGAS) thin films were studied as an alternative absorber layer material to Cu(In{sub x}Ga{sub 1−x})Se{sub 2}. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350 °C, followed by postdeposition annealing at 520 °C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2θ values with increasing Al content. Scanning electron microscopy images revealed dense and well-defined grains, as well as sharp CIGAS/Si(100) interfaces for all films. Atomic force microscopy analysis indicated that the roughness of CIGAS films decreases with increasing Al content. The bandgap of CIGAS films was determined from the optical transmittance and reflectance spectra and was found to increase as Al content increased.
- OSTI ID:
- 22392168
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 3; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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