Real-time x-ray studies of indium island growth kinetics

Journal Article · Sun Mar 15 00:00:00 EDT 2015 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4905498· OSTI ID:22392149

Demasi, Alexander ^[1]; Ludwig, Karl F. ^[2]

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1. Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States)
2. Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 and Division of Material Science and Engineering, Boston University, 15 Saint Mary Street, Brookline, Massachusetts 02446 (United States)

The authors have investigated the early stages of indium island formation and growth by vapor phase deposition on room temperature sapphire using real-time grazing incidence small angle x-ray scattering (GISAXS), followed by ex-situ atomic force microscopy and scanning electron microscopy. The results are consistent with the formation and coalescence of hemispherical islands, as described by Family and Meakin. Monte Carlo simulations of systems of coalescing islands were used to supplement and quantify the results of GISAXS, and a good agreement is seen between the data and the simulations.

• OSTI ID: 22392149
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
42 ENGINEERING
ATOMIC FORCE MICROSCOPY
COALESCENCE
COMPUTERIZED SIMULATION
DEPOSITION
MONTE CARLO METHOD
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SMALL ANGLE SCATTERING
X RADIATION
X-RAY DIFFRACTION