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Title: Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer

Abstract

The authors demonstrate improved device performance of GaN metal–semiconductor–metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub 2}) layer on GaN. The UT-HfO{sub 2} interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO{sub 2} is significantly reduced by more than two orders of magnitude compared to those without HfO{sub 2} insertion. The photoresponsivity at 360 nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO{sub 2} on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time.

Authors:
 [1];
  1. UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)
Publication Date:
OSTI Identifier:
22392135
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; ELECTRON BEAM INJECTION; GALLIUM NITRIDES; HAFNIUM OXIDES; LAYERS; METALS; PERFORMANCE; PHOTODETECTORS; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION

Citation Formats

Kumar, Manoj, Tekcan, Burak, and Okyay, Ali Kemal, E-mail: panwarm72@yahoo.com, E-mail: aokyay@ee.bilkent.edu.tr. Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer. United States: N. p., 2015. Web. doi:10.1116/1.4905735.
Kumar, Manoj, Tekcan, Burak, & Okyay, Ali Kemal, E-mail: panwarm72@yahoo.com, E-mail: aokyay@ee.bilkent.edu.tr. Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer. United States. https://doi.org/10.1116/1.4905735
Kumar, Manoj, Tekcan, Burak, and Okyay, Ali Kemal, E-mail: panwarm72@yahoo.com, E-mail: aokyay@ee.bilkent.edu.tr. 2015. "Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer". United States. https://doi.org/10.1116/1.4905735.
@article{osti_22392135,
title = {Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer},
author = {Kumar, Manoj and Tekcan, Burak and Okyay, Ali Kemal, E-mail: panwarm72@yahoo.com, E-mail: aokyay@ee.bilkent.edu.tr},
abstractNote = {The authors demonstrate improved device performance of GaN metal–semiconductor–metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub 2}) layer on GaN. The UT-HfO{sub 2} interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO{sub 2} is significantly reduced by more than two orders of magnitude compared to those without HfO{sub 2} insertion. The photoresponsivity at 360 nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO{sub 2} on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time.},
doi = {10.1116/1.4905735},
url = {https://www.osti.gov/biblio/22392135}, journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 2,
volume = 33,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}