Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
- Department of Electrical and Electronics Engineering, Bilkent University, 06800, Ankara, Turkey and UNAM, National Nanotechnology Research Center, Bilkent University, 06800, Ankara (Turkey)
- UNAM, National Nanotechnology Research Center, Bilkent University, 06800, Ankara, Turkey and Institute of Materials Science and Nanotechnology, Bilkent University, 06800, Ankara (Turkey)
Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.
- OSTI ID:
- 22392116
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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