Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition
- Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä (Finland)
- Department of Chemistry, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä (Finland)
ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al{sub 2}O{sub 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.
- OSTI ID:
- 22392101
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM OXIDES
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
DEPOSITION
FILMS
METHACRYLIC ACID ESTERS
MORPHOLOGY
NUCLEATION
PMMA
POROUS MATERIALS
ROUGHNESS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION
ZINC OXIDES