Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation
- Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy)
This paper reports on the degradation and recovery of two different series of commercially available InGaN-based blue light emitting diodes submitted to proton irradiation at 3 MeV and various fluences (10{sup 11}, 10{sup 13}, and 10{sup 14} p{sup +}/cm{sup 2}). After irradiation, we detected (i) an increase in the series resistance, in the sub-turn-on current and in the ideality factor, (ii) a spatially uniform drop of the output optical power, proportional to fluence, and (iii) a reduction of the capacitance of the devices. These results suggest that irradiation induced the generation of non-radiative recombination centers near the active region. This hypothesis is further confirmed by the results of the recovery tests carried out at low temperature (150 °C)
- OSTI ID:
- 22392079
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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