Two-dimensional electron gas in monolayer InN quantum wells

Journal Article · Mon Nov 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902916· OSTI ID:22392077

Wang, G. T. ^[1]; Moustakas, T. D. ^[2]; Tsui, D. C. ^[3]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
2. Boston University, Boston, Massachusetts 02215 (United States)
3. Princeton University, Princeton, New Jersey 08544 (United States)

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10{sup 15 }cm{sup −2} (or 1.25 × 10{sup 14 }cm{sup −2} per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm{sup 2}/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

• OSTI ID: 22392077
• Journal Information: Applied Physics Letters, Vol. 105, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON GAS
GALLIUM NITRIDES
INDIUM
INDIUM NITRIDES
QUANTUM WELLS
SUPERLATTICES
TEMPERATURE DEPENDENCE