Defect-free ZnO nanorods for low temperature hydrogen sensor applications
- Centre for Information and Communication Technology, Indian Institute of Technology Jodhpur, Jodhpur 342011 (India)
- Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
- Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)
Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H{sub 2} sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (∼21.6 s) and recovery times (∼27 s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H{sub 2} sensor operates at low temperature (∼70 °C) unlike the existing high temperature (>150 °C) sensors.
- OSTI ID:
- 22392068
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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