Negative differential resistance in GaN tunneling hot electron transistors

Journal Article · Mon Nov 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4900780· OSTI ID:22392014

Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth ^[1]

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1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43202 (United States)

Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

• OSTI ID: 22392014
• Journal Information: Applied Physics Letters, Vol. 105, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRIC CONDUCTIVITY
ELECTRONS
GALLIUM NITRIDES
OSCILLATORS
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS
TUNNEL EFFECT