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Title: Bismuth doping strategies in GeTe nanowires to promote high-temperature phase transition from rhombohedral to face-centered cubic structure

Abstract

The phase transition of Bi-doped (∼3 at. %) GeTe nanowires from a rhombohedral (R) to a face-centered cubic (C) structure was observed in in situ high-temperature X-ray diffraction. The promotion of high-temperature R-C phase transition by a doping approach was revealed. Ab initio energy calculations of doped GeTe at various Bi doping concentrations were performed to interpret the promoted temperature-induced phase transitions. Those results indicated that the total energy differences between R and C structures of doped GeTe decreased as Bi doping concentrations increased, which facilitated R-C phase transitions.

Authors:
; ; ;  [1];  [1]
  1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou Industrial Park, Jiangsu 215123 (China)
Publication Date:
OSTI Identifier:
22392008
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH; CONCENTRATION RATIO; DOPED MATERIALS; FCC LATTICES; GERMANIUM TELLURIDES; NANOWIRES; PHASE TRANSFORMATIONS; TRIGONAL LATTICES; X-RAY DIFFRACTION

Citation Formats

Zhang, Jie, Huang, Rong, Wei, Fenfen, Cheng, Guosheng, University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, and Kong, Tao. Bismuth doping strategies in GeTe nanowires to promote high-temperature phase transition from rhombohedral to face-centered cubic structure. United States: N. p., 2014. Web. doi:10.1063/1.4902091.
Zhang, Jie, Huang, Rong, Wei, Fenfen, Cheng, Guosheng, University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, & Kong, Tao. Bismuth doping strategies in GeTe nanowires to promote high-temperature phase transition from rhombohedral to face-centered cubic structure. United States. https://doi.org/10.1063/1.4902091
Zhang, Jie, Huang, Rong, Wei, Fenfen, Cheng, Guosheng, University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, and Kong, Tao. 2014. "Bismuth doping strategies in GeTe nanowires to promote high-temperature phase transition from rhombohedral to face-centered cubic structure". United States. https://doi.org/10.1063/1.4902091.
@article{osti_22392008,
title = {Bismuth doping strategies in GeTe nanowires to promote high-temperature phase transition from rhombohedral to face-centered cubic structure},
author = {Zhang, Jie and Huang, Rong and Wei, Fenfen and Cheng, Guosheng and University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049 and Kong, Tao},
abstractNote = {The phase transition of Bi-doped (∼3 at. %) GeTe nanowires from a rhombohedral (R) to a face-centered cubic (C) structure was observed in in situ high-temperature X-ray diffraction. The promotion of high-temperature R-C phase transition by a doping approach was revealed. Ab initio energy calculations of doped GeTe at various Bi doping concentrations were performed to interpret the promoted temperature-induced phase transitions. Those results indicated that the total energy differences between R and C structures of doped GeTe decreased as Bi doping concentrations increased, which facilitated R-C phase transitions.},
doi = {10.1063/1.4902091},
url = {https://www.osti.gov/biblio/22392008}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 105,
place = {United States},
year = {Mon Nov 17 00:00:00 EST 2014},
month = {Mon Nov 17 00:00:00 EST 2014}
}