Continuous tuning of W-doped VO{sub 2} optical properties for terahertz analog applications
- Department of Physics and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409 (United States)
- Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)
Vanadium dioxide (VO{sub 2}), with its characteristic metal-insulator phase transition, is a prospective active candidate to realize tunable optical devices operating at terahertz (THz) frequencies. However, the abrupt phase transition restricts its practical use in analog-like continuous applications. Incorporation of tungsten is a feasible approach to alter the phase transition properties of thin VO{sub 2} films. We show that amplitude THz modulation depth of ∼65%, characteristic phase transition temperature of ∼40 °C, and tuning range larger than 35 °C can be achieved with W-doped VO{sub 2} films grown on sapphire substrates. W-doped VO{sub 2} films can also be used to suppress Fabry-Perot resonances at THz frequencies but at temperatures much lower than that observed for undoped VO{sub 2} films. The gradual phase transition temperature window allows for precise control of the W-doped VO{sub 2} optical properties for future analog based THz devices.
- OSTI ID:
- 22391996
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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