Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration
Abstract
We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.
- Authors:
-
- Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)
- Publication Date:
- OSTI Identifier:
- 22391990
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMORPHOUS STATE; CRYSTAL GROWTH; DIELECTRIC MATERIALS; EUTECTICS; GERMANIUM COMPOUNDS; LASERS; LAYERS; MONOCRYSTALS; NANOSTRUCTURES; NUCLEATION; SILICON; THREE-DIMENSIONAL CALCULATIONS; TIN COMPOUNDS
Citation Formats
Li, Haofeng, Brouillet, Jeremy, Wang, Xiaoxin, and Liu, Jifeng. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration. United States: N. p., 2014.
Web. doi:10.1063/1.4902349.
Li, Haofeng, Brouillet, Jeremy, Wang, Xiaoxin, & Liu, Jifeng. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration. United States. https://doi.org/10.1063/1.4902349
Li, Haofeng, Brouillet, Jeremy, Wang, Xiaoxin, and Liu, Jifeng. 2014.
"Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration". United States. https://doi.org/10.1063/1.4902349.
@article{osti_22391990,
title = {Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration},
author = {Li, Haofeng and Brouillet, Jeremy and Wang, Xiaoxin and Liu, Jifeng},
abstractNote = {We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.},
doi = {10.1063/1.4902349},
url = {https://www.osti.gov/biblio/22391990},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 105,
place = {United States},
year = {Mon Nov 17 00:00:00 EST 2014},
month = {Mon Nov 17 00:00:00 EST 2014}
}