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Title: Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

Abstract

We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

Authors:
; ; ;  [1]
  1. Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)
Publication Date:
OSTI Identifier:
22391990
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMORPHOUS STATE; CRYSTAL GROWTH; DIELECTRIC MATERIALS; EUTECTICS; GERMANIUM COMPOUNDS; LASERS; LAYERS; MONOCRYSTALS; NANOSTRUCTURES; NUCLEATION; SILICON; THREE-DIMENSIONAL CALCULATIONS; TIN COMPOUNDS

Citation Formats

Li, Haofeng, Brouillet, Jeremy, Wang, Xiaoxin, and Liu, Jifeng. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration. United States: N. p., 2014. Web. doi:10.1063/1.4902349.
Li, Haofeng, Brouillet, Jeremy, Wang, Xiaoxin, & Liu, Jifeng. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration. United States. https://doi.org/10.1063/1.4902349
Li, Haofeng, Brouillet, Jeremy, Wang, Xiaoxin, and Liu, Jifeng. 2014. "Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration". United States. https://doi.org/10.1063/1.4902349.
@article{osti_22391990,
title = {Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration},
author = {Li, Haofeng and Brouillet, Jeremy and Wang, Xiaoxin and Liu, Jifeng},
abstractNote = {We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.},
doi = {10.1063/1.4902349},
url = {https://www.osti.gov/biblio/22391990}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 105,
place = {United States},
year = {Mon Nov 17 00:00:00 EST 2014},
month = {Mon Nov 17 00:00:00 EST 2014}
}