Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

Journal Article · Mon Nov 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901421· OSTI ID:22391949

Liu, Hanhui; Wang, Peng; Qi, Dongfeng; Li, Xin; Han, Xiang; Wang, Chen; Chen, Songyan; Li, Cheng; Huang, Wei ^[1]

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1. Department of Physics, Semiconductor Photonics Research Center, Xiamen university, Xiamen, Fujian 361005 (China)

The modulation of Schottky barrier height of metal/Ge inserting an amorphous Ge layer has been demonstrated. It is interested that the Schottky barrier height of Al/amorphous-Ge/n-Ge junctions is oscillated with increase of the a-Ge thickness from 0 to 10 nm, and when the thickness reaches above 10 nm, the Al/amorphous-Ge/n-Ge shows ohmic characteristics. Electron hopping through localized states of a-Ge layer, the alleviation of metal induced gap states, as well as the termination of dangling bonds at the amorphous-Ge/n-Ge interface are proposed to explain the anomalous modulation of Schottky barrier height.

• OSTI ID: 22391949
• Journal Information: Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMORPHOUS STATE
DOPED MATERIALS
ELECTRONS
GERMANIUM
INTERFACES
LAYERS
METALS
MODULATION
SEMICONDUCTOR JUNCTIONS
THICKNESS