Giant enhancement of terahertz emission from nanoporous GaP

Journal Article · Mon Nov 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901903· OSTI ID:22391946

Korotchenkov, A.; Evtikhiev, V. P. ^[1]; Arlauskas, A.; Adomavičius, R.; Krotkus, A. ^[2]; Ulin, V. P. ^[1]; Belov, P. ^[3]

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1. Ioffe Institute, 26 Polytekhnicheskaya, St. Petersburg 194021 (Russian Federation)
2. Center for Physical Sciences and Technology, 11 A. Goštauto, Vilnius LT-01108 (Lithuania)
3. ITMO University, 49 Kronverkskiy Ave., St. Petersburg 19701 (Russian Federation)

In this paper, we have studied the emission of terahertz radiation from nanoporous semiconductor matrices of GaP excited by the femtosecond laser pulses. We observe 3–4 orders of magnitude increase of terahertz radiation emission from the nanoporous matrix compared to bulk material. The effect is mainly related to drastic increase of the sample surface and pinning of conducting electrons to surface states. This result opens up a promising way to create powerful sources of terahertz radiation using nanoporous semiconductors.

• OSTI ID: 22391946
• Journal Information: Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRONS
GALLIUM PHOSPHIDES
LASERS
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
SURFACES
THZ RANGE