Electronic, mechanical and dielectric properties of silicane under tensile strain

Journal Article · Fri May 15 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915398· OSTI ID:22391719

Jamdagni, Pooja; Sharma, Munish; Ahluwalia, P. K. ^[1]; Kumar, Ashok ^[2]; Thakur, Anil ^[3]

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1. Physics Department, Himachal Pradesh University, Shimla, Himachal Pradesh, India 171005 (India)
2. Physics Department, Panjab University, Chandigarh, India, 160014 (India)
3. Physics Department, Govt. Collage Solan, Himachal Pradesh, India,173212 (India)

The electronic, mechanical and dielectric properties of fully hydrogenated silicene i.e. silicane in stable configuration are studied by means of density functional theory based calculations. The band gap of silicane monolayer can be flexibly reduced to zero when subjected to bi-axial tensile strain, leading to semi-conducting to metallic transition, whereas the static dielectric constant for in-plane polarization increases monotonically with increasing strain. Also the EEL function show the red shift in resonance peak with tensile strain. Our results offer useful insight for the application of silicane monolayer in nano-optical and electronics devices.

• OSTI ID: 22391719
• Journal Information: AIP Conference Proceedings, Vol. 1661, Issue 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DENSITY FUNCTIONAL METHOD
ELECTRONIC STRUCTURE
ENERGY GAP
HYDROGENATION
PERMITTIVITY
PHASE TRANSFORMATIONS
POLARIZATION
RED SHIFT
SILICENE
STRAINS