Damage correlations in semiconductor devices exposed to gamma and high energy swift heavy ions

Journal Article · Fri May 15 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915366· OSTI ID:22391694

Prakash, A. P. Gnana ^[1]

---

1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570 006 (India)

NPN rf power transistors and N-channel depletion MOSFETs are irradiated by different high energy swift heavy ions and {sup 60}Co gamma radiation in the dose range of 100 krad to 100 Mrad. The damage created by different heavy ions and {sup 60}Co gamma radiation in NPN rf power transistors and N-channel depletion MOSFETs have been correlated and studied in the same dose range. The recoveries in the electrical characteristics of different swift heavy ions and {sup 60}Co gamma irradiated devices have been studied after annihilation.

• OSTI ID: 22391694
• Journal Information: AIP Conference Proceedings, Vol. 1661, Issue 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COBALT 60
CORRELATIONS
GAMMA RADIATION
HEAVY IONS
IRRADIATION
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RF SYSTEMS
SEMICONDUCTOR MATERIALS