Energy spectrum of D{sup 0} centre in a spherical Gaussian quantum dot
- School of Physics, University of Hyderabad, Hyderabad-500046, Telangana (India)
The properties of a neutral hydrogenic donor (D{sup 0}) centres have been studied for a GaAs semiconductor quantum dot with the Gaussian confinement potential. The energy levels of the ground state (n = 1) and the excited states of both the first excited (n = 2) and second excited (n = 3) configurations have been calculated by variational method. It has been shown that the excited states of the (D{sup 0}) centre in quantum dot are bound for sufficiently strong confinement potential. The conditions of binding for the ground state as well as excited states have been determined as functions of the potential strength and quantum dot radius. The ground state electron energy is compared with those available in the literature.
- OSTI ID:
- 22391692
- Journal Information:
- AIP Conference Proceedings, Vol. 1661, Issue 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COLOR CENTERS
COMPARATIVE EVALUATIONS
CONFINEMENT
ELECTRONS
ENERGY SPECTRA
EXCITED STATES
GALLIUM ARSENIDES
GROUND STATES
POTENTIALS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPHERICAL CONFIGURATION
VARIATIONAL METHODS