248nm silicon photoablation: Microstructuring basics
Journal Article
·
· AIP Conference Proceedings
- Advanced Multidisciplinary MEMS-Based Integrated Electronic NCER Centre of Excellent (AMBIENCE), School of Microelectronic Engineering, Universiti Malaysia Perlis, 02600 Arau, Perlis (Malaysia)
248nm pulses from a KrF excimer laser was used to ablate a Si wafer in order to ascertain the laser pulse and energy effects for use as a microstructuring tool for MEMS fabrication. The laser pulses were varied between two different energy levels of 8mJ and 4mJ while the number of pulses for ablation was varied. The corresponding ablated depths were found to range between 11 µm and 49 µm, depending on the demagnified beam fluence.
- OSTI ID:
- 22391683
- Journal Information:
- AIP Conference Proceedings, Vol. 1660, Issue 1; Conference: ICoMEIA 2014: International Conference on Mathematics, Engineering and Industrial Applications 2014, Penang (Malaysia), 28-30 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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