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Title: Effect of growth temperature on composition control for vapor deposition of YBa{sub 2}Cu{sub 3}O{sub 7−δ} precursor films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4902626· OSTI ID:22390566
; ; ;  [1]
  1. State Key Laboratory of High-temperature Gas Dynamics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China)

This work aims at exploiting the role of growth temperature on the dynamic behavior of deposition atoms as well as its resultant impact on the composition control during the synthesis of YBa{sub 2}Cu{sub 3}O{sub 7−δ} precursor films by vapor codeposition. The codeposition of Yt, BaF{sub 2} and Cu is performed in vacuum chamber under a wide range of growth temperature from 25°C to 600°C, the mass of each element deposited on LaAlO{sub 3} substrate and thus the film composition is examined by the inductively coupled plasma atomic emission spectroscopy. It is shown that the deposition amount of Cu decreases obviously with the increase of growth temperature; however, the mass of Yt and BaF{sub 2} deposited on the substrate appears to be insensitive to growth temperature. Moreover, high temperature may also trigger the influence of adsorbates composition on Cu desorption, and therefore the deposition amount of Cu decreases almost linearly as the mol fraction of BaF{sub 2} in the adlayers increases. Nevertheless, when the deposition is conducted at room temperature, the influence of mol fraction of BaF{sub 2} on Cu desorption vanishes. The detailed mechanisms associated with above phenomena are unveiled by molecular dynamics analysis, additionally the physical picture about adsorption behaviors on the growing interface under different deposition conditions is summarized, which is valuable for handling the composition control during the vapor codeposition of different functional films.

OSTI ID:
22390566
Journal Information:
AIP Conference Proceedings, Vol. 1628, Issue 1; Conference: 29. International Symposium on Rarefied Gas Dynamics, Xi'an (China), 13-18 Jul 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English