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Title: Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4901488· OSTI ID:22390418

Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocation-type defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.

OSTI ID:
22390418
Journal Information:
AIP Conference Proceedings, Vol. 1623, Issue 1; Conference: International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk (Russian Federation), 3-5 Sep 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English