Positron annihilation spectroscopy of vacancy-type defects hierarchy in submicrocrystalline nickel during annealing
Journal Article
·
· AIP Conference Proceedings
- Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055, Russia and National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation)
- Institute of Strength Physics and Materials Science SB RAS, Tomsk, 634055 (Russian Federation)
- National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation)
- Institute for Metals Superplasticity Problems RAS, Ufa, 450001 (Russian Federation)
Positron annihilation and X-ray diffraction analysis have been used to study submicrocrystalline nickel samples prepared by equal channel angular pressing. In the as-prepared samples the positrons are trapped at dislocation-type defects and in vacancy clusters that can include up to 5 vacancies. The study has revealed that the main positron trap centers at the annealing temperature of ΔT= 20°C-180°C are low-angle boundaries enriched by impurities. At ΔT = 180°C-360°C, the trap centers are low-angle boundaries providing the grain growth due to recrystallization in-situ.
- OSTI ID:
- 22390418
- Journal Information:
- AIP Conference Proceedings, Vol. 1623, Issue 1; Conference: International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk (Russian Federation), 3-5 Sep 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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