Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode

Journal Article · Sat Nov 30 00:00:00 EST 2013 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2013V043N11ABEH015127· OSTI ID:22373678

Alias, M S; Maskuriy, F; Faiz, F; Mitani, S M ^[1]; AL-Omari, A N ^[2]

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1. Advanced Physical Technologies Laboratory, Telekom Malaysia Research and Development (TMR and D), Lingkaran Teknokrat Timur, 63000 Cyberjaya, Selangor (Malaysia)
2. Electronic Engineering Department, Hijjawi Faculty for Engineering Technology, Yarmouk University, Irbid 21163 (Jordan)

We report optimisation of optical properties of a strained GaInNAs/GaAs quantum-well laser, by taking into account the many-body effect theory and the bowing parameter. The theoretical transition energies and the GaInNAs bowing parameter are fitted into the photoluminescence spectrum of the GaInNAs quantum well, obtained in the experiment. The theoretical results for the photoluminescence spectrum and laser characteristics (light, current and voltage) exhibits a high degree of agreement with the experimental results. (lasers)

• OSTI ID: 22373678
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 43, Issue 11; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOWING
GALLIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
MANY-BODY PROBLEM
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
OPTIMIZATION
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR DIODES
SPECTRA
STRAINS
WAVELENGTHS