Optical limiting effects in nanostructured silicon carbide thin films

Journal Article · Tue Dec 31 00:00:00 EST 2013 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2013V043N12ABEH015270· OSTI ID:22373649

Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu ^[1]; Semenov, A V ^[2]

---

1. Institute of Physics, National Academy of Sciences of Ukraine, Kiev (Ukraine)
2. Institute for Single Crystals of NAS of Ukraine (Ukraine)

We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at λ = 532 nm (I{sub cl} ∼ 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at λ = 1064 nm (I{sub cl} ∼ 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

• OSTI ID: 22373649
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 43, Issue 12; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
ABSORPTION
LASER RADIATION
NANOSTRUCTURES
NONLINEAR PROBLEMS
PHOTONS
SILICON CARBIDES
THIN FILMS