Interfacial characterization and electrical properties of Ni–GaSb contacts
- National Nano Device Laboratories, National Applied Research Laboratories (NARLabs), Hsinchu 300, Taiwan (China)
The microstructural characterization of Ni–GaSb junctions in samples annealed at 300 °C, 350 °C, and 400 °C in a N{sub 2} atmosphere was elucidated using transmission electron microscopy in conjunction with energy-dispersive spectrometry, nanobeam electron diffraction, and grazing-incident X-ray diffraction. Only the NiSb(Ga) phase is formed at the interface of Ni/GaSb when the annealing temperature is below 350 °C. However, three phases—NiSb, Ni{sub 2}Ga{sub 3}, and NiSb(Ga)—are formed simultaneously at the interface between Ni/GaSb when the annealing temperature is increased to 400 °C, which causes a significant increase in the sheet resistance of the Ni–GaSb alloy. These results indicate that the annealing temperature of the Ni/GaSb structure should be maintained below 350 °C for the formation of low-resistance metal Ni/GaSb contacts in GaSb-based p-type metal-oxide-semiconductor field-effect transistors.
- OSTI ID:
- 22351129
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ELECTRIC CONTACTS
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
FIELD EFFECT TRANSISTORS
GALLIUM ANTIMONIDES
INTERFACES
MICROSTRUCTURE
MOSFET
NICKEL
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TEMPERATURE RANGE 0400-1000 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION