Single crystal diamond for infrared sensing applications

Journal Article · Mon Oct 20 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4899278· OSTI ID:22350993

Kovi, K. K.; Isberg, J. ^[1]; Kolahdouz, M. ^[2]; Moeen, M.; Radamson, H. H. ^[2]; Balmer, R. S. ^[3]

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1. Division for Electricity Research, Uppsala University, Box 534, S-751 21, Uppsala (Sweden)
2. School of Information and Communication Technology, KTH Royal Institute of Technology, Isafjordsgatan 22-26, Electrum 229, 16640 Kista (Sweden)
3. Element Six Ltd, King's Ride Park, Ascot, Berkshire SL5 8BP (United Kingdom)

The synthesis of new materials for thermal infrared (IR) detection has been an intensive research area in recent years. Among new semiconductor materials, synthetic diamond has the ability to function even under very high temperature and high radiation conditions. In the present work, diamond Schottky diodes with boron concentrations in the range of 10{sup 14 }< B < 10{sup 17 }cm{sup −3} are presented as candidates for IR thermal sensors with an excellent temperature coefficient of resistance (−8.42%/K) and very low noise levels around 6.6 × 10{sup −15} V{sup 2}/Hz. This enables huge performance enhancements for a wide variety of systems, e.g., automotive and space applications.

• OSTI ID: 22350993
• Journal Information: Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON ADDITIONS
DETECTION
DIAMONDS
INFRARED RADIATION
MONOCRYSTALS
RADIATION DETECTORS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SENSORS
SYNTHESIS
TEMPERATURE COEFFICIENT