Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

Journal Article · Mon Oct 20 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4899144· OSTI ID:22350991

Ahn, Byung Du ^[1]; Park, Jin-Seong ^[2]

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1. School of Electrical and Electronic Engineering, 50, Yonsei University, Seoul 120-749 (Korea, Republic of)
2. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.

• OSTI ID: 22350991
• Journal Information: Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BONDING
CARRIER MOBILITY
CHEMICAL BONDS
ELECTRIC FIELDS
ELECTRONIC STRUCTURE
EQUIPMENT
GALLIUM COMPOUNDS
HYDROGEN IONS
INDIUM COMPOUNDS
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSISTORS
ZINC COMPOUNDS