Nanodot formation induced by femtosecond laser irradiation
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
- Department of Atmospheric, Oceanic, and Space Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)
The femtosecond laser generation of ZnSe nanoscale features on ZnSe surfaces was studied. Irradiation with multiple exposures produces 10–100 nm agglomerations of nanocrystalline ZnSe while retaining the original single crystal structure of the underlying material. The structure of these nanodots was verified using a combination of scanning transmission electron microscopy, scanning electron microscopy, and atomic force microscopy. The nanodots continue to grow hours after irradiation through a combination of bulk and surface diffusion. We suggest that in nanodot formation the result of ultrafast laser induced point defect formation is more than an order of magnitude below the ZnSe ultrafast melt threshold fluence. This unique mechanism of point defect injection will be discussed.
- OSTI ID:
- 22350976
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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