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Title: Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments

Abstract

In this work, the impact of ammonium sulfide ((NH{sub 4}){sub 2}S) surface treatment on the electrical passivation of the Al{sub 2}O{sub 3}/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al{sub 2}O{sub 3}, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D{sub it}) distribution showed a minimum value of 4 × 10{sup 12 }cm{sup −2}eV{sup −1} at E{sub v} + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al{sub 2}O{sub 3}/p-GaSb interface of samples treated with 10% and 22% (NH{sub 4}){sub 2}S. In combination, these effects degrade the interface quality as reflected in the CV characteristics.

Authors:
;  [1]; ; ; ;  [2]; ;  [3]
  1. School of Engineering, University of Glasgow, Glasgow, G12 8LT (United Kingdom)
  2. Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)
  3. Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)
Publication Date:
OSTI Identifier:
22350970
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CRYSTAL DEFECTS; DENSITY; DISTRIBUTION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GALLIUM ANTIMONIDES; INTERFACES; LAYERS; PASSIVATION; ROUGHNESS; SURFACE TREATMENTS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TRAPS

Citation Formats

Peralagu, Uthayasankaran, Thayne, Iain G., Povey, Ian M., Carolan, Patrick, Lin, Jun, Hurley, Paul K., Contreras-Guerrero, Rocio, and Droopad, Ravi. Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments. United States: N. p., 2014. Web. doi:10.1063/1.4899123.
Peralagu, Uthayasankaran, Thayne, Iain G., Povey, Ian M., Carolan, Patrick, Lin, Jun, Hurley, Paul K., Contreras-Guerrero, Rocio, & Droopad, Ravi. Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments. United States. https://doi.org/10.1063/1.4899123
Peralagu, Uthayasankaran, Thayne, Iain G., Povey, Ian M., Carolan, Patrick, Lin, Jun, Hurley, Paul K., Contreras-Guerrero, Rocio, and Droopad, Ravi. 2014. "Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments". United States. https://doi.org/10.1063/1.4899123.
@article{osti_22350970,
title = {Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments},
author = {Peralagu, Uthayasankaran and Thayne, Iain G. and Povey, Ian M. and Carolan, Patrick and Lin, Jun and Hurley, Paul K. and Contreras-Guerrero, Rocio and Droopad, Ravi},
abstractNote = {In this work, the impact of ammonium sulfide ((NH{sub 4}){sub 2}S) surface treatment on the electrical passivation of the Al{sub 2}O{sub 3}/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al{sub 2}O{sub 3}, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D{sub it}) distribution showed a minimum value of 4 × 10{sup 12 }cm{sup −2}eV{sup −1} at E{sub v} + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al{sub 2}O{sub 3}/p-GaSb interface of samples treated with 10% and 22% (NH{sub 4}){sub 2}S. In combination, these effects degrade the interface quality as reflected in the CV characteristics.},
doi = {10.1063/1.4899123},
url = {https://www.osti.gov/biblio/22350970}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 105,
place = {United States},
year = {Mon Oct 20 00:00:00 EDT 2014},
month = {Mon Oct 20 00:00:00 EDT 2014}
}