Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments
Abstract
In this work, the impact of ammonium sulfide ((NH{sub 4}){sub 2}S) surface treatment on the electrical passivation of the Al{sub 2}O{sub 3}/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al{sub 2}O{sub 3}, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D{sub it}) distribution showed a minimum value of 4 × 10{sup 12 }cm{sup −2}eV{sup −1} at E{sub v} + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al{sub 2}O{sub 3}/p-GaSb interface of samples treated with 10% and 22% (NH{sub 4}){sub 2}S. In combination, these effects degrade the interface quality as reflected in the CV characteristics.
- Authors:
-
- School of Engineering, University of Glasgow, Glasgow, G12 8LT (United Kingdom)
- Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)
- Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)
- Publication Date:
- OSTI Identifier:
- 22350970
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CRYSTAL DEFECTS; DENSITY; DISTRIBUTION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GALLIUM ANTIMONIDES; INTERFACES; LAYERS; PASSIVATION; ROUGHNESS; SURFACE TREATMENTS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; TRAPS
Citation Formats
Peralagu, Uthayasankaran, Thayne, Iain G., Povey, Ian M., Carolan, Patrick, Lin, Jun, Hurley, Paul K., Contreras-Guerrero, Rocio, and Droopad, Ravi. Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments. United States: N. p., 2014.
Web. doi:10.1063/1.4899123.
Peralagu, Uthayasankaran, Thayne, Iain G., Povey, Ian M., Carolan, Patrick, Lin, Jun, Hurley, Paul K., Contreras-Guerrero, Rocio, & Droopad, Ravi. Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments. United States. https://doi.org/10.1063/1.4899123
Peralagu, Uthayasankaran, Thayne, Iain G., Povey, Ian M., Carolan, Patrick, Lin, Jun, Hurley, Paul K., Contreras-Guerrero, Rocio, and Droopad, Ravi. 2014.
"Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments". United States. https://doi.org/10.1063/1.4899123.
@article{osti_22350970,
title = {Electrical and physical characterization of the Al{sub 2}O{sub 3}/p-GaSb interface for 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S surface treatments},
author = {Peralagu, Uthayasankaran and Thayne, Iain G. and Povey, Ian M. and Carolan, Patrick and Lin, Jun and Hurley, Paul K. and Contreras-Guerrero, Rocio and Droopad, Ravi},
abstractNote = {In this work, the impact of ammonium sulfide ((NH{sub 4}){sub 2}S) surface treatment on the electrical passivation of the Al{sub 2}O{sub 3}/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al{sub 2}O{sub 3}, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH{sub 4}){sub 2}S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D{sub it}) distribution showed a minimum value of 4 × 10{sup 12 }cm{sup −2}eV{sup −1} at E{sub v} + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al{sub 2}O{sub 3}/p-GaSb interface of samples treated with 10% and 22% (NH{sub 4}){sub 2}S. In combination, these effects degrade the interface quality as reflected in the CV characteristics.},
doi = {10.1063/1.4899123},
url = {https://www.osti.gov/biblio/22350970},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 16,
volume = 105,
place = {United States},
year = {Mon Oct 20 00:00:00 EDT 2014},
month = {Mon Oct 20 00:00:00 EDT 2014}
}