Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation
- Rzhanov Institute of Semiconductor Physics, SB RAS, 13, Lavrentiev Ave., Novosibirsk 630090 (Russian Federation)
- Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation)
- Boreskov Institute of Catalysis, SB RAS, 5, Lavrentiev Ave., Novosibirsk 630090 (Russian Federation)
In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect of a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte with addition of fluorine (NH{sub 4}F) led to the formation of oxygen free well-ordered wide gap fluorinated interfacial layer at InAs(111)A with the fixed charge (Q{sub fix}) and density of interface states (D{sub it}) in the range of (4–6) × 10{sup 10 }cm{sup −2} and (2–12) × 10{sup 10 }eV{sup −1 }cm{sup −2}, respectively. We found that MOS capacitors showed excellent capacitance-voltage characteristics with very small frequency dispersion (<1% and <15 mV). Fluorinated interfacial layer consists of crystalline isostructural compound with the InAs substrate, which remains intact with the atomic smoothness and sharpness that explain unpinned behavior of the Fermi level.
- OSTI ID:
- 22350944
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMMONIUM FLUORIDES
CAPACITORS
DENSITY
DISPERSIONS
ELECTRIC POTENTIAL
ELECTROCHEMISTRY
ELECTROLYTES
FERMI LEVEL
FLUORINE
INDIUM ARSENIDES
INTERFACES
LAYERS
METALS
OXIDATION
OXYGEN
PASSIVATION
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SUBSTRATES