High brightness photonic band crystal semiconductor lasers in the passive mode locking regime
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
- Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)
High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm{sup −2} sr{sup −1} are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.
- OSTI ID:
- 22350936
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Passive mode locking of monolithic semiconductor ring lasers at 86 GHz
Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width
108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorber
Journal Article
·
Mon Sep 20 00:00:00 EDT 1993
· Applied Physics Letters; (United States)
·
OSTI ID:22350936
Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width
Journal Article
·
Fri Sep 13 00:00:00 EDT 2019
· Optics Express
·
OSTI ID:22350936
+2 more
108 GHz passive mode locking of a multiple quantum well semiconductor laser with an intracavity absorber
Journal Article
·
Mon Jan 22 00:00:00 EST 1990
· Applied Physics Letters; (USA)
·
OSTI ID:22350936
+1 more