Surfactant role of Ag atoms in the growth of Si layers on Si(111)√3×√3-Ag substrates
- Department of Materials Science and Engineering, Tokyo Institute of Technology, J1-3, 4259 Nagatsuda, Midori-ku, Yokohama 226-8502 (Japan)
The growth of Si layers on Si(111)√3×√3-Ag substrates was studied for coverages of up to a few mono-layers. Atomically flat islands were observed to nucleate in the growth at 570 K. The top surfaces of the islands were covered in Ag atoms and exhibited a √3×√3 reconstruction with the same surface state dispersions as Si(111)√3×√3-Ag substrates. These results indicate that the Ag atoms on the substrate always hop up to the top of the Si layers.
- OSTI ID:
- 22350885
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Substrate temperature effects on ({radical}3 {times} radical}3) R30{degree} domain growth of Ag on Si (111) surface
Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates
Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties
Conference
·
Wed Aug 01 00:00:00 EDT 1990
·
OSTI ID:22350885
Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates
Journal Article
·
Mon Oct 28 00:00:00 EDT 2013
· Journal of Applied Physics
·
OSTI ID:22350885
+5 more
Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties
Journal Article
·
Thu May 07 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22350885