Resistive switching phenomena in TiO{sub x} nanoparticle layers for memory applications
- RBNI and Chemical Engineering Department, Technion, 3200003 Haifa (Israel)
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country (Spain)
- Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay (France)
Electrical characteristics of a Co/ TiO{sub x}/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO{sub 2} layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO{sub x} nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.
- OSTI ID:
- 22350868
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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