Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)
- Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan, Taiwan (China)
This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.
- OSTI ID:
- 22350867
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
DIELECTRIC MATERIALS
DISSOCIATION
ELECTRON BEAM INJECTION
ELECTRON-ELECTRON INTERACTIONS
ELECTRONS
EQUIPMENT
INJECTION
INTERFACES
METALS
MOS TRANSISTORS
MOSFET
NANOSTRUCTURES
N-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TRAPPING