skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fabrication and characterization of Cu(In,Ga)Se{sub 2} p-channel thin film transistors

Abstract

Cu(In,Ga)Se{sub 2} thin film transistors are demonstrated with the on-off ratio of ∼10{sup 3} and the saturation hole mobility of 1.8 cm{sup 2}/V-s. Due to the high hole concentration (∼5 × 10{sup 17 }cm{sup −3}), the channel needs to be etched to turn off for the accumulation mode operation. The Cu(In,Ga)Se{sub 2} film after etching reveals a larger mobility, and a narrower (112) X-ray diffraction line than the original thick layer, indicating the better crystallinity of the initial growth as compared to the subsequent Cu(In,Ga)Se{sub 2} layer. Both the hole concentration and the saturation mobility increase with the decreasing Cu/(In + Ga) ratio probably due to the effect of Cu vacancies.

Authors:
 [1]
  1. Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)
Publication Date:
OSTI Identifier:
22350865
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER SELENIDES; ETCHING; FABRICATION; GALLIUM COMPOUNDS; HOLE MOBILITY; HOLES; INDIUM COMPOUNDS; LAYERS; SATURATION; THIN FILMS; TRANSISTORS; X-RAY DIFFRACTION

Citation Formats

Zhu, Xiaobo, and Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw. Fabrication and characterization of Cu(In,Ga)Se{sub 2} p-channel thin film transistors. United States: N. p., 2014. Web. doi:10.1063/1.4897407.
Zhu, Xiaobo, & Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw. Fabrication and characterization of Cu(In,Ga)Se{sub 2} p-channel thin film transistors. United States. https://doi.org/10.1063/1.4897407
Zhu, Xiaobo, and Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw. 2014. "Fabrication and characterization of Cu(In,Ga)Se{sub 2} p-channel thin film transistors". United States. https://doi.org/10.1063/1.4897407.
@article{osti_22350865,
title = {Fabrication and characterization of Cu(In,Ga)Se{sub 2} p-channel thin film transistors},
author = {Zhu, Xiaobo and Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw},
abstractNote = {Cu(In,Ga)Se{sub 2} thin film transistors are demonstrated with the on-off ratio of ∼10{sup 3} and the saturation hole mobility of 1.8 cm{sup 2}/V-s. Due to the high hole concentration (∼5 × 10{sup 17 }cm{sup −3}), the channel needs to be etched to turn off for the accumulation mode operation. The Cu(In,Ga)Se{sub 2} film after etching reveals a larger mobility, and a narrower (112) X-ray diffraction line than the original thick layer, indicating the better crystallinity of the initial growth as compared to the subsequent Cu(In,Ga)Se{sub 2} layer. Both the hole concentration and the saturation mobility increase with the decreasing Cu/(In + Ga) ratio probably due to the effect of Cu vacancies.},
doi = {10.1063/1.4897407},
url = {https://www.osti.gov/biblio/22350865}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 105,
place = {United States},
year = {Mon Oct 06 00:00:00 EDT 2014},
month = {Mon Oct 06 00:00:00 EDT 2014}
}