GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications
Abstract
Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.
- Authors:
-
- Instituto de Física, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)
- Instituto de Química, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)
- Publication Date:
- OSTI Identifier:
- 22350847
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CONCENTRATION RATIO; CRYSTAL DEFECTS; DEUTERIUM; DEUTERIUM COMPOUNDS; DIELECTRIC MATERIALS; EVAPORATION; GERMANIUM; GERMANIUM OXIDES; LAYERS; MODIFICATIONS; OXYGEN; SILICON; SILICON OXIDES; STOICHIOMETRY; VACANCIES
Citation Formats
Bom, N. M., E-mail: nicolau.bom@ufrgs.br, Soares, G. V., Hartmann, S., Bordin, A., and Radtke, C. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications. United States: N. p., 2014.
Web. doi:10.1063/1.4898062.
Bom, N. M., E-mail: nicolau.bom@ufrgs.br, Soares, G. V., Hartmann, S., Bordin, A., & Radtke, C. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications. United States. https://doi.org/10.1063/1.4898062
Bom, N. M., E-mail: nicolau.bom@ufrgs.br, Soares, G. V., Hartmann, S., Bordin, A., and Radtke, C. 2014.
"GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications". United States. https://doi.org/10.1063/1.4898062.
@article{osti_22350847,
title = {GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications},
author = {Bom, N. M., E-mail: nicolau.bom@ufrgs.br and Soares, G. V. and Hartmann, S. and Bordin, A. and Radtke, C.},
abstractNote = {Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.},
doi = {10.1063/1.4898062},
url = {https://www.osti.gov/biblio/22350847},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 105,
place = {United States},
year = {Mon Oct 06 00:00:00 EDT 2014},
month = {Mon Oct 06 00:00:00 EDT 2014}
}