High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China)
- School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ∼51 nm at a center wavelength of 1060 nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.
- OSTI ID:
- 22350838
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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