Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
- Department of Electronic Engineering, University of Rome Tor Vergata, 00133 Rome (Italy)
- OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg (Germany)
Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.
- OSTI ID:
- 22350825
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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